在ITO玻璃衬底上制备锆钛酸铅铁电薄膜

利用射频反应性溅射沉积技术在掺的Ｓｎ的Ｉｎ２Ｏ３导电透明膜衬底上制备了钙钛矿型Ｐｂ（Ｚｒ，Ｔｉ）Ｏ３（ＰＺＴ）铁电薄膜。研究了沉积参量与热处理工艺对铁电薄膜结构和性能的影响。运用Ｘ射线衍射、Ｘ射线光电子能谱和扫描电镜等技术，分析了薄膜的晶体结构、表面形貌和表面元素化学状态。测量了不同处理条件下薄膜的铁电性能。结果表明：在掺Ｓｎ的Ｉｎ２Ｏ３导电透明膜衬底上可以得到表面无裂纹，化学计量比符合要求的ＰＺ

DEPOSITING Pb(Zr,Ti)O3 FERROELECTRIC THIN FILMS ON ITO GLASS SUBSTRATE

Pb(Zr,Ti)O 3 ferroelectric thin films with perovskite structure were prepared on Sn_doped In 2O 3(ITO) substrates by r.f. reactive sputtering technique. The effects of annealing treatment and deposition parameters on the microstructure and properties of ferroelectric thin films were investigated. The crystal structure, chemical states of elements, and surface morphologies of ferroelectric thin films were characterized by XRD, XPS and SEM, respectively. The ferroelectric properties of the deposited thin films were measured. Average grain size of the Pb(Zr,Ti)O 3 ferroelectric thin film was about 250 nm, which was distributed uniformly in quadrilateral and triangle shapes. The annealing temperature and the oxygen ratio in Ar O 2 reactive atmosphere were found to have clear effects on the ferroelectric properties of the deposited thin films.