| 基于能带调制模型的高压增强型AlGaN/GaN HFET器件 |
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| 引用本文： | 张竞,陈万军,汪志刚,魏进,张波. 基于能带调制模型的高压增强型AlGaN/GaN HFET器件[J]. 固体电子学研究与进展, 2012, 32(6): 524-530 |
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| 作者姓名： | 张竞 陈万军 汪志刚 魏进 张波 |
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| 作者单位： | 电子科技大学电子薄膜与集成器件重点实验室,成都,610054 |
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| 基金项目： | 国家自然科学基金青年基金资助项目，中央高校基本科研业务费资助项目 |
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| 摘 要： | 提出了一种能带调制模型,通过在异质结界面处引入负离子电荷(如氟离子)调制异质结处的局部能带分布,实现了对异质结界面处的高密度2DEG的改变。基于能带调制模型,提出了一种复合调制沟道AlGaN/GaNHFET器件。通过在增强型沟道调制区和RESURF调制区分别引入不同剂量的负离子,不仅实现了增强型器件,而且可以降低尖峰电场,优化异质结电场分布,提高器件击穿电压。通过器件仿真软件对其器件工作原理进行了模拟分析,并通过实验结果表明,其器件品质因子FOM由传统器件的4.8MW.cm-2提高到26.7MW.cm-2。
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| 关 键 词： | 氮化镓 异质结场效应晶体管 增强型 RESURF |
High Breakdown Voltage Enhancement-mode AlGaN/GaN HFET Device Based on Energy Band Modulation Model |
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| ZHANG Jing , CHEN Wanjun , WANG Zhigang , WEI Jin , ZHANG Bo. High Breakdown Voltage Enhancement-mode AlGaN/GaN HFET Device Based on Energy Band Modulation Model[J]. Research & Progress of Solid State Electronics, 2012, 32(6): 524-530 |
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| Authors: | ZHANG Jing CHEN Wanjun WANG Zhigang WEI Jin ZHANG Bo |
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| Affiliation: | (The State Key Laboratory of Electronic Thin Films and Integrated Device,University ofElectronic Science and Technology of China,Chengdu,610054,CHN) |
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| Abstract: | An energy band modulation model is proposed.The introduction of negative ions into the hetero-junction interface for modulating regional energy band distribution changes the electron density of 2DEG at the hetero-junction interface.Based on the energy band modulation model,a complex modulated channel AlGaN/GaN HFET is proposed.Enhancement mode device which reduces the electric field peaks and optimizes the electric field distribution as well as enhances the breakdown voltage is achieved through different doping concentration of negative ions in enhancement-mode channel modulation region and RESURF modulation region,respectively.The experimental result indicates that the figure of merit(BV2/RON) increases from 4.8 MW·cm-2 to 26.7 MW·cm-2. |
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| Keywords: | GaN hetero-junction field effect transistor enhancement-mode RESURF |
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