| 常温下采用射频等离子体法合成碳化硅膜 |
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| 引用本文： | 宋巧丽,王德真,张鹏云,张家良.常温下采用射频等离子体法合成碳化硅膜[J].真空,2005,42(2):27-30. |
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| 作者姓名： | 宋巧丽 王德真 张鹏云 张家良 |
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| 作者单位： | 大连理工大学三束材料表面改性国家重点实验室,辽宁,大连,116024 |
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| 摘 要： | 采用射频等离子体增强的气相沉积法，以硅烷和乙烯为原料，在常温下成功的合成了碳化硅薄膜。对于该条件下合成的碳化硅薄膜的结构特征，采用SEM、TEM、XRD、IR等手段进行了分析；分析结果表明我们的样品是以碳硅键为主的薄膜。
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| 关 键 词： | 碳化硅膜 射频等离子体 气相沉积 |
| 文章编号： | 1002-0322(2005)02-0027-04 |
Synthesizing SiC thin films on substrate by RF-plasma CVD at room temperature |
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| SONG Qiao-li,WANG De-zhen,ZHANG Peng-yun,ZHANG Jia-liang.Synthesizing SiC thin films on substrate by RF-plasma CVD at room temperature[J].Vacuum,2005,42(2):27-30. |
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| Authors: | SONG Qiao-li WANG De-zhen ZHANG Peng-yun ZHANG Jia-liang |
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| Abstract: | SiC thin films of large area were prepared successfully in a plasma-enchanced CVD reactor at room temperature, with silane and ethene used as raw materials and Ar as carrier gas. XRD, TEM, IR, SEM were used to investigate its structural characteristics. The results showed that the thin film is mainly composed of Si-C bond. |
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| Keywords: | SiC thin film RF-plasma CVD |
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