| 2-4GHz波段低噪声放大器的仿真设计 |
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| 引用本文： | 赵玉胜.2-4GHz波段低噪声放大器的仿真设计[J].电子设计工程,2012,20(23):190-192. |
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| 作者姓名： | 赵玉胜 |
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| 作者单位： | 电子科技大学物理电子学院,四川成都,610054 |
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| 摘 要： | 利用pHEMT工艺设计了一个2-4GHz宽带微波单片低噪声放大器电路。本设计中采用了具有低噪声、较高关联增益、pHEMT技术设计的ATF-54143晶体管，电路采用二级级联放大的结构形式，利用微带电路实现输入输出和级间匹配．通过ADS软件提供的功能模块和优化环境对电路增益、噪声系数、驻波比、稳定系数等特性进行了研究设计。最终使得该LNA在2-4GHz波段内增益大于20dB，噪声小于1-2dB，输出电压驻波比小于2，达到了设计指标的要求。
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| 关 键 词： | 低噪声放大器 负反馈网络 pHEMT ADS仿真 |
Simulation and design of 2-4 GHz low-noise amplifier |
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| ZHAO Yu-sheng.Simulation and design of 2-4 GHz low-noise amplifier[J].Electronic Design Engineering,2012,20(23):190-192. |
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| Authors: | ZHAO Yu-sheng |
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| Affiliation: | ZHAO Yu-sheng(Institute of Physical Electronics,UESTC,Chengdu 610054,China) |
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| Abstract: | Based on the LNA with excellent performance from 2 GHz to 4 GHz band purpose, this design uses a low-noise, high associated gain, PHEMT technology designed ATF-54143 transistor, the circuit is presented with two cascade structureform, mierostrip circuit is used to complete the input, output and interstage matching, through the functionality modules and optimizing environment provided by ADS software, the circuit gain, noise figure, VSWR, stability factor and other characteristics are studied, ultimately from 2 GHz to 4 GHz band the LNA gain is greater than 20 dB, the noise is less than 1.2 dB, input and output VSWR is less than 2, and all factors meet the design requirements. |
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| Keywords: | low-noise amplifier negative feedback network HEMT ADS simulation and optimization |
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