| 12GHz 0.68dB的InGaAs/AlGaAs赝配HEMT |
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| 引用本文： | 陈效建,刘军,郑雪帆.12GHz 0.68dB的InGaAs/AlGaAs赝配HEMT[J].固体电子学研究与进展,1993(1). |
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| 作者姓名： | 陈效建 刘军 郑雪帆 |
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| 作者单位： | 南京电子器件研究所 210016
(陈效建，刘军)，南京电子器件研究所 210016(郑雪帆) |
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| 摘 要： | 报道了微波低噪声异质结赝配HEMT的研究结果。以半绝缘GaAs为衬底,用MBE方法生长异质结材料。采用低应力、低损伤工艺程序,以AuGeNi/Au形成源漏欧姆接触,Al形成栅肖特基势垒接触,聚酰亚胺介质为钝化膜,制成了InGaAs/AlGaAs赝配HEMT。其直流跨导为280mS/mm,在12GHz下,器件最小噪声系数为0.68dB,相关增益为7.0dB。
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| 关 键 词： | 晶体管 低噪声 迁移率 |
12 GHz 0. 68 dB InGaAs/AlGaAs Pseudomorphic HEMT |
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| Chen Xiaojian,Liu Jun,Zheng Xuefan.12 GHz 0. 68 dB InGaAs/AlGaAs Pseudomorphic HEMT[J].Research & Progress of Solid State Electronics,1993(1). |
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| Authors: | Chen Xiaojian Liu Jun Zheng Xuefan |
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| Abstract: | In this paper, we report the experimental results of InGaAs/AlGaAs pseudomorphic HEMT. Its heterojunction structure was grown on the semi-insula ting GaAs substrate by MBE. Using the processes with lowest formed damage and AuGeNi/Au/GaAs ohmic contact, Al/AlGaAs Schottky barrier, polyimide pro-tecting film, we have developed the InGaAs/AlGaAs PM-HEMT. Transconduc-tance of the device is gm = 280 mS/mm. The minimum noise figure and associated gain of the device are 0. 68 dB and 7. 0 dB at ?12 GHz,respectively. |
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| Keywords: | Transistor Low Noise Mobility |
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