| 金属纳米晶快闪存储器研究进展 |
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| 引用本文： | 张敏,丁士进,陈玮,张卫.金属纳米晶快闪存储器研究进展[J].微电子学,2007,37(3):369-373. |
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| 作者姓名： | 张敏 丁士进 陈玮 张卫 |
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| 作者单位： | 专用集成电路与系统国家重点实验室,复旦大学微电子研究院,上海,201203 |
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| 基金项目： | 国家高技术研究发展计划(863计划);国家自然科学基金;上海市浦江人才计划 |
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| 摘 要： | 金属纳米晶具有态密度高、费米能级选择范围广以及无多维载流子限制效应等优越性,预示着金属纳米晶快闪存储器在下一代闪存器件中具有很好的应用前景。从金属纳米晶存储器的工作原理、纳米晶的制备方法、以及新型介质材料和电荷俘获层结构等方面,对金属纳米晶存储器近年来的研究进展进行了总结。
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| 关 键 词： | 金属纳米晶 快闪存储器 能带工程 |
| 文章编号： | 1004-3365（2007）03-0369-05 |
| 修稿时间： | 2006-10-232007-02-13 |
Progress in Research and Development of Metal Nanocrystal Memories |
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| ZHANG Min,DING Shi-jin,CHEN Wei,ZHANG Wei.Progress in Research and Development of Metal Nanocrystal Memories[J].Microelectronics,2007,37(3):369-373. |
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| Authors: | ZHANG Min DING Shi-jin CHEN Wei ZHANG Wei |
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| Affiliation: | State Key Laboratory of AS IC and System, School of Microelectronics , Fudan University, Shanghai 201203, P. R. China |
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| Abstract: | Metal nanocrystals possess various advantages,such as high density states,a wide range of work functions,as well as no multidimensional carrier confinement effects etc,indicating that metal nanocrystal memories are very promising for next generation flash memory applications.In this article,developments of metal nanocrystal memories in recent years are summarized,including the principle of metal nanocrystal memory,techniques for metal nanocrystal formation,new dielectric materials and charge trapping layer structure and so on. |
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| Keywords: | Metal nanocrystal Flash memory Bandgap engineering |
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