Ultrahigh Responsivity of Ternary Sb–Bi–Se Nanowire Photodetectors |
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Authors: | Rong Huang Jie Zhang Fenfen Wei Lin Shi Tao Kong Guosheng Cheng |
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Affiliation: | 1. Suzhou Institute of Nano‐Tech and Nano‐Bionics, Chinese Academy of Sciences, Jiangsu, China;2. University of Chinese Academy of Sciences, Beijing, China |
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Abstract: | High‐quality single‐crystalline ternary (Sb1‐xBix)2Se3 nanowires (NWs) (x = 0–0.88) are synthesized by chemical vapor deposition. Nanowires with x from 0 to 0.75 are indexed as an orthorhombic structure. With increasing Bi incorporation ratio, (Sb1‐xBix)2Se3 NWs exhibit remarkable photoresponsivities, which originate from growing surface Se vacancies and augmented oxygen chemisorptions. Notably, spectra responsivity and external quantum efficiency of an (Sb0.44Bi0.56)2Se3 NW photodetector reach as high as ≈8261.4 A/W and ≈1.6 × 106 %, respectively. Those excellent performances unambiguously demonstrate that Sb–Bi–Se NWs are promising for the utilizations of high‐sensitivity and high‐speed photodetectors and photoelectronic switches. |
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Keywords: | nanowires photodetectors surface Se vacancies |
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