Direct Growth of Nanocrystalline Graphene/Graphite Transparent Electrodes on Si/SiO2 for Metal‐Free Schottky Junction Photodetectors |
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| Authors: | Zengxing Zhang Yunxian Guo Xiaojuan Wang Dong Li Fengli Wang Sishen Xie |
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| Affiliation: | 1. Shanghai Key Laboratory of Special Artificial, Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai, China;2. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China |
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| Abstract: | Conventional methods to produce graphene/silicon Schottky junctions inevitably involve graphene transfer and metal deposition, which leads to the techniques being complicated, high‐cost, and environmentally unfriendly. It is possible to directly grow hybrid nanocrystalline graphene/graphite transparent electrodes from photoresist on quartz without any catalyst. Due to the source material being photoresist, nanographene/graphite patterns can easily be made on Si/SiO2 structures to form nanographene/silicon Schottky junctions via commercial photolithography and silicon techniques. The obtained Schottky junctions exhibit excellent properties with respect to photodetection, with photovoltage responsivity of 300 V W‐1 at a light power of 0.2 μW and photovoltage response time of less than 0.5 s. The devices also exhibit an excellent reliability with the photovoltage deviating less than 1% when cycled over 200 times. |
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| Keywords: | graphene transparent electrodes Schottky junctions photodetectors |
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