Exploiting Memristive BiFeO3 Bilayer Structures for Compact Sequential Logics |
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| Authors: | Tiangui You Yao Shuai Wenbo Luo Nan Du Danilo Bürger Ilona Skorupa René Hübner Stephan Henker Christian Mayr René Schüffny Thomas Mikolajick Oliver G. Schmidt Heidemarie Schmidt |
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| Affiliation: | 1. Material Systems for Nanoelectronics, Chemnitz University of Technology, Chemnitz, Germany;2. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China;3. Institute of Ion Beam Physics and Materials Research, Helmholtz‐Zentrum Dresden‐Rossendorf, Dresden, Germany;4. Faculty of Electrical Engineering and Information Technology, Institute of Circuits and SystemsTechnische Universit?t Dresden, Dresden, Germany;5. NaMLab gGmbH, Dresden, Germany;6. Institute for Integrative Nanosciences, IFW Dresden, 01069, Germany |
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| Abstract: | Resistive switching devices are considered as one of the most promising candidates for the next generation memories and nonvolatile logic applications. In this paper, BiFeO3:Ti/BiFeO3 (BFTO/BFO) bilayer structures with optimized BFTO/BFO thickness ratio which show symmetric, bipolar, and nonvolatile resistive switching with good retention and endurance performance, are presented. The resistive switching mechanism is understood by a model of flexible top and bottom Schottky‐like barrier heights in the BFTO/BFO bilayer structures. The resistive switching at both positive and negative bias make it possible to use both polarities of reading bias to simultaneously program and store all 16 Boolean logic functions into a single cell of a BFTO/BFO bilayer structure in three logic cycles. |
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| Keywords: | memristor resistive switching BiFeO3
Boolean logic functions reconfigurable nonvolatile logics |
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