Comparison of OMVPE Grown GaAs/AlGaAs and GaAs/InGaP HEMT and PHEMT structures |
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Authors: | K A Jones R T Lareau T Monahan J R Flemish R L Pfeffer R E Sherriff C W Litton R L Jones C E Stutz D C Look |
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Affiliation: | (1) Army Research Lab, AMSRC-EP-EC, 07703-5601 Fort Monmouth, NJ;(2) Wright Laboratory-WL/ELR, Wpafb, OH;(3) Wright State University, Dayton, OH |
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Abstract: | Symmetric δ-doped InGaP and AlGaAs PHEMT structures have been grown by organometallic vapor phase epitaxy with properties
that approach those of MBE grown AlGaAs structures. The 300 and 77K carrier concentrations for the InGaP PHEMT were 2.72 and
2.56 × 1012 cm2
−2 and the mobilities were 5,920 and 22,000 cm2
2/V.s. These excellent values suggest that problems associated with switching the anion at the channel heterojunction have
been overcome. The corresponding values for the AlGaAs PHEMT were 2.51 and 2.19 × 1012 cm2
−2 and 6,500 and 20,400 cm2/V.s. The uniformity in the indium concentration in the InGaAs layer as determined by photoluminescence, photoreflection,
double crystal x-ray diffraction, and Rutherford backscattering was found to be good, but the percent In in the AlGaAs pseudo-morphic
high electron mobility transistor (PHEMT) was less than that in the InGaP PHEMT even though the programmed values were the
same. The uniformity in the doping distribution as determined by secondary ion mass spectroscopy and electrochemical capacitance-voltage
measurements was found to be good, but it decreased with distance from the center of the susceptor. Also, most of the dopants
in the δ-doped InGaP and AlGaAs layers were activated. |
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Keywords: | GaAs/AlGaAs GaAs/InGaP high electron mobility transistor (HEMT) pseudo-morphic high electron mobility transistor (PHEMT) organometallic vapor phase epitaxy (OMVPE) |
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