| 高隔离度宽频段组合式RF-MEMS开关的设计 |
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| 引用本文： | 孙建海,崔大付,张璐璐. 高隔离度宽频段组合式RF-MEMS开关的设计[J]. 半导体技术, 2009, 34(3) |
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| 作者姓名： | 孙建海 崔大付 张璐璐 |
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| 作者单位： | 中国科学院电子学研究所传感技术国家重点实验室,北京,100080;中国科学院电子学研究所传感技术国家重点实验室,北京,100080;中国科学院电子学研究所传感技术国家重点实验室,北京,100080 |
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| 摘 要： | 接触式与电容耦合式两类RF MEMS开关各自在一定的频段内,都具有较高的隔离度,但仍然很难满足微波控制系统中对高隔离度的要求.为了获得全波段高隔离度RF MEMS开关,单元开关很难达到要求,在此目标要求下,提出了组合式RF MEMS开关的设计,分别利用HFSS软件对各单元进行结构参数优化,再将两者集成在一起,得到的组合式RF MEMS开关,这种组合式开关在0～20 GHz时隔离度都高于-60 dB,在(≤5 GHz),隔离度高于-70 dB,这是一般单元开关及其他半导体固态开关所无法企及的,而且,在DC～20 GHz范围内,开关的插入损耗小于-0.20 dB,而且并没因隔离度的提高,牺牲了插入损耗.
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| 关 键 词： | 组合式射频微电子机械系统开关 插入损耗 隔离度 微波控制系统 |
Design of High Isolation Contact/Capacitive RF MEMS Switch with Wide Bandwidth |
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| Sun Jianhai,Cui Dafu,Zhang Lulu. Design of High Isolation Contact/Capacitive RF MEMS Switch with Wide Bandwidth[J]. Semiconductor Technology, 2009, 34(3) |
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| Authors: | Sun Jianhai Cui Dafu Zhang Lulu |
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| Affiliation: | State Key Laboratory of Transducer Technology;Institute of Electronics;Chinese Academy of Sciences;Beijing 100080;China |
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| Abstract: | The DC contact RF MEMS switch and the capacitive RF MEMS switch show high isolation for special frequency respectively,but they are difficult to satisfy the application of high isolation in the microwave control system.In order to obtain high isolation for all microwaves,an integrated contact/capacitive RF MEMS switch was reported instead of the unit switch.The configuration parameters of the unit switches were optimized using HFSS(high frequency structure simulator).The unit switches were integrated after ... |
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| Keywords: | contact/capacitive RF MEMS switch insertion loss isolation microwave control system |
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