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用椭圆偏振测量法分析碲镉汞的组分及其均匀性
引用本文:黄仕华,蔡毅,钱晓凡,陈永安.用椭圆偏振测量法分析碲镉汞的组分及其均匀性[J].半导体光电,2001,22(3):224-226.
作者姓名:黄仕华  蔡毅  钱晓凡  陈永安
作者单位:1. 昆明理工大学理学院,
2. 昆明物理研究所,
基金项目:云南工业大学校科研和教改项目;98010;
摘    要:简略介绍了椭偏仪的测量原理和测量装置。分析了Hg1-xCdxTe(MCT)的 组分与椭偏仪的参数Δ和ψ之间的关系,结果发现碲镉汞的组分x主要与椭偏仪的参数ψ有关,而且x与ψ的经验关系为ψ=14.84-10.22x。最后椭圆偏振测量的方法分析了碲镉汞的横向和纵向组分均匀性。该方法具有非破坏性、有效、快捷的特点。

关 键 词:椭圆偏振测量  碲镉汞  组分均匀性  半导体材料
文章编号:1001-5868(2001)03-0224-03
修稿时间:2000年9月11日

Analysis on Composition and Uniformity of HgCdTe by Ellipsometry
HUANG Shi-hua,CAI Yi,QIAN Xiao-fan,CHEN Yong-an.Analysis on Composition and Uniformity of HgCdTe by Ellipsometry[J].Semiconductor Optoelectronics,2001,22(3):224-226.
Authors:HUANG Shi-hua  CAI Yi  QIAN Xiao-fan  CHEN Yong-an
Affiliation:HUANG Shi-hua1,CAI Yi2,QIAN Xiao-fan1,CHEN Yong-an1
Abstract:Principle of ellipsometric measurement is presented and ellipsometry is briefly described, followed by analysis on the relationship between the composition of HgCdTe and the ellipsometric parameters ( ψ and Δ). It is found that the ellipsometric parameter ψ is chiefly correlated with composition x, and x has an approximately linear relationship to ψ . Finally, the transverse and longitudinal compositional uniformity of HgCdTe is analyzed by ellipsometric measurement which is a nondestructive, effective and rapid analytic method.
Keywords:ellipsometric measurement  HgCdTe  compositional uniformity
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