| Analyses and Simulation of V-I Characteristics for Solar Cells Based on P-N Junction |
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| 引用本文： | ZHENG Jian-bang REN Ju GUO Wen-ge HOU Chao-qi. Analyses and Simulation of V-I Characteristics for Solar Cells Based on P-N Junction[J]. 半导体光子学与技术, 2005, 11(4): 253-258 |
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| 作者姓名： | ZHENG Jian-bang REN Ju GUO Wen-ge HOU Chao-qi |
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| 作者单位： | School of Science, Northwestern Polytechnical University, Xi＇an 710072, CHN |
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| 基金项目： | 陕西省自然科学基金，Graduate Creative Seed Foundation of Northwestern Polytechnical University |
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| 摘 要： | Through theoretical analyses of the Shockley equation and the difference between a practical P-N junction and its ideal model, the mathematical models of P-N junction and solar cells had been obtained. With Matlab software, the V-I characteristics of diodes and solar cells were simulated, and a computer simulation model of the solar cells based on P-N junction was also established. Based on the simulation model, the influences of solar cell＇s internal resistances on open-circuit voltage and short-circuit current under certain illumination were numerically analyzed and solved. The simulation results showed that the equivalent series resistance and shunt resistance could strongly affect the V-I characteristics of solar cell, but their influence styles were different.
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| 关 键 词： | 太阳能电池 PN节 V-I性质 等价循环 |
| 文章编号： | 1007-0206（2005）04-0253-06 |
| 收稿时间： | 2005-06-06 |
| 修稿时间： | 2005-06-22 |
Analyses and Simulation of V-I Characteristics for Solar Cells Based on P-N Junction |
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| ZHENG Jian-bang,REN Ju,GUO Wen-ge,HOU Chao-qi. Analyses and Simulation of V-I Characteristics for Solar Cells Based on P-N Junction[J]. Semiconductor Photonics and Technology, 2005, 11(4): 253-258 |
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| Authors: | ZHENG Jian-bang REN Ju GUO Wen-ge HOU Chao-qi |
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| Abstract: | Through theoretical analyses of the Shockley equation and the difference between a practical P-N junction and its ideal model, the mathematical models of P-N junction and solar cells had been obtained. With Matlab software, the V-I characteristics of diodes and solar cells were simulated, and a computer simulation model of the solar cells based on P-N junction was also established. Based on the simulation model, the influences of solar cell's internal resistances on open-circuit voltage and short-circuit current under certain illumination were numerically analyzed and solved. The simulation results showed that the equivalent series resistance and shunt resistance could strongly affect the V-I characteristics of solar cell, but their influence styles were different. |
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| Keywords: | P-N junction V-I characteristics Solar cell Equivalent circuit Simulation |
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