恒磁场对Si、Ge基二极管I-V特性的影响及机理分析

在恒磁场为0～2T的范围内,对Si、Ge基二极管的反向饱和电流和正向电流进行了测试.结果表明,在一定的电学条件下,随着磁感应强度B的增大,磁场对Ge基二极管的反向饱和电流的影响比Si基二极管的更明显.磁场对Si基二极管的正向特性几乎没有影响,但可以观测到Ge基二极管的正向电流随磁场的增强发生了变化.依据半导体理论基础,对实验结果进行了分析并通过建立理论模型对磁场中二极管的I-V特性进行了模拟.

Influences of Magnetic Field on I-V Characteristics of Diodes Based on Silicon and Germanium

The reverse saturation current and forward current of diodes based on Si and Ge were measured in the constant magnetic field between 0 and 2 Tesla (T). It is found that the influence on the reverse saturation current of the Ge diode is more evident than that of the Si diode with the increase of magnetic field B. The magnetic field has no influence on the Si diode forward I-V characteristics but for the Ge diode some variation could be observed. By using appropriate theories, the experimental results are explained and a theoretical model has also been built. According to the model, some simulations for the I-V characteristics of the diodes were finished.