Progress on large area n‐type silicon solar cells with front laser doping and a rear emitter |
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Authors: | Angel Urueñ a,Monica Aleman,Emanuele Cornagliotti,Aashish Sharma,Michael Haslinger,Loic Tous,Richard Russell,Joachim John,Filip Duerinckx,Jozef Szlufcik |
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Abstract: | We report on the progress of imec's n‐type passivated emitter, rear totally diffused rear junction silicon solar cells. Selective laser doping has been introduced in the flow, allowing the implementation of a shallow diffused front surface field and a reduction of the recombination current in the contact area. Simplifications have been implemented towards a more industrial annealing sequence, by replacing expensive forming gas annealing steps with a belt furnace annealing. By applying these improvements, together with an advanced texturing process and emitter passivation by atomic layer deposition of Al2O3, 22.5% efficient cells (three busbars) have been realized on commercial 156 · 156 mm2 Czochralski‐Si. This result has been independently confirmed by ISE CalLab. Copyright © 2016 John Wiley & Sons, Ltd. |
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Keywords: | laser doping n‐type rear emitter solar cell FSF belt furnace anneal large area |
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