Low temperature growth of rutile TiO2 films in modified rf magnetron sputtering |
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| Affiliation: | 1. Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200, Thailand;2. Department of Chemistry, Faculty of Science, Chiang Mai University, Chiang Mai 50200, Thailand;3. Department of Materials Science and Technology, Faculty of Science, Prince of Songkla University, Hat Yai, Songkhla 90112, Thailand;4. Materials Science Research Center, Faculty of Science, Chiang Mai University, Chiang Mai 50200, Thailand |
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| Abstract: | Low temperature (≤300°C) growth of rutile TiO2 films with high refractive index which is equal to bulk TiO2 crystal was achieved by using a modified sputtering method. Depositions were carried out in rf magnetron sputtering apparatus equipped with an auxiliary permanent magnet just under the grounded electrode. The as-deposited films showed rutile polycrystalline structure and fine surface morphology indicating higher densification. Remarkable changes in composition, total current and energy of incident ions were presented at a Ar–O2 total pressure of 2.7 Pa. The rutile phase grows in a modified sputtering method in contrast with anatase phase growth in conventional sputtering apparatus. |
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