Copper (I) Oxide (Cu2O) based back contact for p‐i‐n CdTe solar cells |
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Authors: | Johannes Tü rck,Hermann‐Josef Nonnenmacher,Paula M. L. Connor,Sebastian Siol,Bastian Siepchen,Jan Peter Heimfarth,Andreas Klein,Wolfram Jaegermann |
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Abstract: | In this paper a promising solution for the notorious problem of manufacturing a stable low ohmic back contact of a CdTe thin film superstrate solar cell is presented without using elemental copper. Instead we have used a Cu2O layer inserted between the CdTe absorber and metal contact (Au). In contrast to the barrier free band alignment gained by using the transitivity rules, XPS measurements show a barrier in the valence band of the Cu2O layers directly after deposition, which results in a low performing JV curve. The contact can be improved by a short thermal treatment resulting in efficiencies superior to copper based contacts for standard CdS/CdTe hetero junction solar cells prepared on commercial glass/FTO substrates. By replacing the CdS window layer with a CdS:O buffer layer efficiencies of >15% could be achieved. Copyright © 2016 John Wiley & Sons, Ltd. |
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Keywords: | X‐ray photoelectron spectroscopy (XPS) interface Cu2O back contact CdTe solar cell |
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