A 60 GHz SiGe-HBT Power Amplifier With 20% PAE at 15 dBm Output Power |
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| Authors: | Van-Hoang Do Subramanian V Keusgen W Boeck G |
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| Affiliation: | Design Center of TES Electron. Solutions GmbH, Berlin; |
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| Abstract: | A monolithic power amplifier (PA) operating in the 60 GHz band is presented. The circuit has been designed utilizing an advanced 0.25 SiGe-heterojunction bipolar transistor (HBT) technology, featuring npn transistors with and . A two-stage cascode architecture has been chosen for the implementation. Design techniques and optimization procedure are explained in detail. Measurements show a small signal gain of 18.8 dB and an output power of 14.5 dBm under 1 dB gain compression at 61 GHz. At this frequency, the saturated output power is 15.5 dBm and the peak power added efficiency (PAE) is 19.7%. To our knowledge, this is the highest PAE reported so far for a monolithic 61 GHz PA in SiGe-HBT technology. |
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