| GaAs/AlAs超晶格中的TO声子限制模 |
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| 引用本文： | 汪兆平,韩和相,李国华,江德生.GaAs/AlAs超晶格中的TO声子限制模[J].半导体学报,1988,9(5):559-562. |
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| 作者姓名： | 汪兆平 韩和相 李国华 江德生 |
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| 作者单位： | 中国科学院半导体研究所 北京
(汪兆平，韩和相，李国华)，中国科学院半导体研究所 北京(江德生) |
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| 摘 要： | 本文报道在室温和非共振散射条件下,GaAs/AlAs 超晶格结构中TO声子限制模的拉曼散射测量结果.超晶格样品用MBE方法生长在<001>晶向的GaAs衬底上.在背散射条件下,具有E对称性的TO 声子是拉曼禁戒的.但是利用近布儒斯特角入射和大孔径的散射光收集透镜,我们观测到分别限制在GaAs和AlAs层中的TO声子模.其中,限制在AlAs层中的TO模是首次报道.从测量的TO声子限制模频率得到的声子色散曲线与GaAs和AlAs体材料的TO声子色散曲线进行比较,二者符合良好.进一步证明,超晶格结构的拉曼散射测量是测定晶体声子色散曲线的有效的实验方法.
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| 关 键 词： | 横光学声子限制模 超晶格 拉曼散射 |
Confined TO Phonon Modes in GaAs/AlAs Superlattices |
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| Wang Zhaoping/Institute of Semiconductors,Academia Sinica,BeijingHan Hexiang/Institute of Semiconductors,Academia Sinica,BeijingLi Guohua/Institute of Semiconductors,Academia Sinica,BeijingJiang Desheng/Institute of Semiconductors,Academia Sinica,Beijing.Confined TO Phonon Modes in GaAs/AlAs Superlattices[J].Chinese Journal of Semiconductors,1988,9(5):559-562. |
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| Authors: | Wang Zhaoping/Institute of Semiconductors Academia Sinica BeijingHan Hexiang/Institute of Semiconductors Academia Sinica BeijingLi Guohua/Institute of Semiconductors Academia Sinica BeijingJiang Desheng/Institute of Semiconductors Academia Sinica Beijing |
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| Abstract: | Raman scattering study of confined TO phonon modes in GaAs/AlAs superlattices at roomtemperature and under off-resonance conditions are reported.Superlattice samples were grownby MBE method on <001> GaAs substrates.In back scattering geometry,TO phonons with Esymmetry are Raman inactive.GaAs-like and AlAs-like TO confined modes were observedby near Brewster angle incidence and large aperture of scattering light collecting lens.AlAs-like TO confined modes are reported for the first time.TO phonon dispersion curves resul-ting from the confined TO modes are in good agreement with those of bulk GaAs and AlAs.It is proved further that Raman scattering measurements of superlattices is a meaningful me-thod for determinig the phonon dispersion curves of crystals. |
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| Keywords: | Confined TO modes Superlttices Raman scattering |
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