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Simulation and Analysis of Photo—charge Transfer Characteristics of Bipolar Junction Photogate Transistor for CMOS Imagers
引用本文:JINXiang-liang CHENJie QIUYu-lin. Simulation and Analysis of Photo—charge Transfer Characteristics of Bipolar Junction Photogate Transistor for CMOS Imagers[J]. 半导体光子学与技术, 2003, 9(2): 75-78
作者姓名:JINXiang-liang CHENJie QIUYu-lin
作者单位:Microelectronics R&D Center,Chinese Academy of Sciences,Beijing 100029,CHN
基金项目:中国科学院"百人计划" 
摘    要:The principle of the two carriers contributing to carry the pixel signal charges is firstly presented,and then the bipolar junction photogate transistor(BJPT)with high performance is proposed for the CMOS image sensor.The numerical analytical model of the photo-Chrge transfer for the bipolar junction photogate is established in detail.Some numerical simulations are obtained unider 0.6μm CMOS process,which show that its readout rate increases exponentially with the increase of the photo-Charge at applied voltage.

关 键 词:双极性互连晶体管 CMOS成像器 互补金属氧化物半导体 仿真 光电荷
收稿时间:2002-08-02

Simulation and Analysis of Photo-charge Transfer Characteristics of Bipolar Junction Photogate Transistor for CMOS Imagers
JIN Xiang-liang,CHEN Jie,QIU Yu-lin. Simulation and Analysis of Photo-charge Transfer Characteristics of Bipolar Junction Photogate Transistor for CMOS Imagers[J]. Semiconductor Photonics and Technology, 2003, 9(2): 75-78
Authors:JIN Xiang-liang  CHEN Jie  QIU Yu-lin
Abstract:The principle of the two carriers contributing to carry the pixel signal charges is firstly presented,and then the bipolar junction photogate transistor(BJPT)with high performance is proposed for the CMOS image sensor.The numerical analytical model of the photo-charge transfer for the bipolar junction photogate is established in detail. Some numerical simulations are obtained under 0.6μm CMOS process,which show that its readout rate increases exponentially with the increase of the photo-charge at applied voltage.
Keywords:BJPT  Photo-charge transfer characteristics  CMOS Imagers
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