不同沉积温度对纳米Ti薄膜微观结构和残余应力的影响

本实验采用纳米压痕技术利用Suresh模型和Lee模型研究了直流磁控溅射制备薄膜时，不同基底温度对Ti薄膜内部残余应力的影响，并将其计算结果与曲率法测试结果进行比较分析。同时结合原子力和XRD对薄膜表面形貌和微观结构进行了分析。研究发现：Suresh模型的计算结果与曲率法测量结果更为接近，Lee模型更适合对Ti薄膜中的应力大小进行计算。计算结果表明：金属Ti薄膜表面晶粒随基底温度的增加先增大后减小，薄膜中的残余应力则由压应力转变为拉应力。

The Effect of Different Substrate Temperatures on the Microstructure and Residual Stress of Ti Film

In this paper, the influence of different substrate temperatures of Ti film prepared by the direct current (DC) magnetron sputtering on the internal residual stress of Ti film was investigated experimentally by nanoindentation technique using Suresh model and Lee model. The comparison between the results of nanoindentation method and curvature method was performed. At the same time, the surface morphology and microstructure of Ti film are analyzed using atomic force microscope (AFM) and X-ray diffraction (XRD). The results showed that the residual stress value obtained using Suresh model was almost the same as that by the curvature method, so the Suresh model is more suitable for calculating the residual stress of Ti film. Together with the nanoindentation data and micro-structure analysis, it was found that with the substrate temperature rising, the grain size of Ti film first increased and then decreased; the residual stress of the Ti film changed from the compressive stress to tensile stress.