The liquid-phase epitaxial growth of low net donor concentration (5 × 1014-5 × 1015/cm3) GaSb for detector applications in the 1.3 - 1.6 µm region |
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| Authors: | Capasso F Panish M Sumski S |
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| Affiliation: | Bell Laboratories, Murray Hill, NJ, USA; |
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| Abstract: | We report on the liquid-phase epitaxial (LPE) growth of low doped n-GaSb for long wavelength photodiodes. Very low net donor concentration epilayers (5 times 10^{14}-5 times 10^{15}/cm3) were grown both from undoped Ga rich solutions in the300-375degC range and by compensation using Ga-rich solutions atsim500degC with intentionally added Te. The preparation of Au-GaSb Schottky diodes forC-Vprofiling is also discussed. |
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