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Film thickness dependence of the dielectric properties of SrTiO3/BaTiO3 multilayer thin films deposited by double target RF magnetron sputtering |
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| Authors: | Hong-Hsin HuangMoo-Chin Wang Huey-Jiuan LinMin-Hsiung Hon Fu-Yuan HsiaoNan-Chung Wu Chi-Shiung Hsi |
| Affiliation: | a Department of Electrical Engineering, Cheng Shiu University, 840 Cheng Ching Road, Niaosong, Kaohsiung 83347, Taiwan b Department of Materials Science and Engineering, National United University, 1 Lien-Da, Kung-Ching Li, Miao-Li 36003, Taiwan c Department of Materials Science and Engineering, National Cheng Kung University, 1 TaHsueh Road, Tainan 70101, Taiwan d Department of Fragrance and Cosmetic Science, Kaohsiung Medical University, 100 Shih-Chuan 1st Road, Kaohsiung 807, Taiwan |
| Abstract: | Four-layer SrTiO3/BaTiO3 thin films ((ST/BT)4) with various thicknesses deposited on Pt/Ti/SiO2/Si substrates at 500 °C by double target RF magnetron sputtering have been investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM), profilometry, capacitance-voltage and current-voltage measurements. The XRD patterns reveal the frame formation of the sputter deposited (ST/BT)4 with controlled modulation. The adhesion between the Pt bottom electrode layer and the BT layer is excellent. The dielectric constant of the (ST/BT)4 multilayer thin film increases with increasing film thickness. The effects of temperature, frequency, and bias voltage on the dielectric constant of the (ST/BT)4 multilayer thin films are discussed in detail. The leakage current density of the (ST/BT)4 multilayer with a thickness of 450.0 nm is lower than 1.0 × 10−8 A/cm2 for the applied voltage of less than 5 V, showing that the multilayer thin films with such a characteristic could be applied for use in dynamic random access memory (DRAMs) capacitors. |
| Keywords: | Multilayer SrTiO3/BaTiO3 thin film Double target RF magnetron sputtering Dielectric constant Leakage current density DRAMs capacitor |
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