A new high performance phase shifter using BaxSr1-xTiO3 thin films |
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| Authors: | Acikel B. Taylor T.R. Hansen P.J. Speck J.S. York R.A. |
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| Affiliation: | Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA; |
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| Abstract: | In this paper, a new device topology has been proposed to implement parallel plate capacitors using BaxSr1-xTiO3 (BST) thin films. The device layout utilizes a single parallel capacitor and minimizes conductor losses in the base electrode. The new design simplifies the monolithic process and overcomes the problems associated with electrode patterning. An X-band 180° phase shifter has been implemented using the new device design. The circuit provided 240° phase shift with an insertion loss of only 3 dB at 10 GHz at room temperature. We have shown a figure of merit 93°/dB at 6.3 GHz and 87°/dB at 8.5 GHz. To our knowledge, these are the best figure of merit results reported in the literature for distributed phase shifters implemented using BST films at room temperature |
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