Heat‐ and water‐proof quantum dot/siloxane composite film: Effect of quantum dot–siloxane linkage |
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| Authors: | Hwea Yoon Kim Da‐Eun Yoon Junho Jang Gwang‐Mun Choi Doh C Lee Byeong‐Soo Bae |
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| Affiliation: | 1. Wearable Platform Materials Technology Center, Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Korea;2. Department of Chemical and Biomolecular Engineering, KAIST, Daejeon, Korea |
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| Abstract: | We report on the effect of linkage between quantum dot (QD) and siloxane matrix by preparing two different QD/siloxane films. One has chemical linkages between QD and siloxane matrix, and the other has no chemical linkages between QD and siloxane matrix. The QD/siloxane (methacryl) film, which has the chemical linkages, exhibits no degradation of photoluminescence (PL) quantum yield (QY) under heat or moisture condition for over 1 month, while the QD/siloxane (epoxy) film, which has no linkages, shows drastic decreased of PL QY. The chemical linkages between QD and siloxane matrix that makes effective siloxane passivation layer intact on the surface of QDs in QD/siloxane (methacryl) film. Given its exceptional stability with the help of linkages between QD and siloxane matrix, we expect that the QD/siloxane (methacryl) film is best fitted in PL‐type down‐conversion layer for display applications. |
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| Keywords: | quantum dots siloxane cross‐linking surface passivation photoluminescence quantum yield thermal stability |
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