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Low-distortion CMOS transconductor |
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| Authors: | Wilson G. Chan P.K. |
| Affiliation: | Sch. of Electr. Commun. & Electr. Eng., Polytech. South West, Plymouth, UK; |
| Abstract: | A new transconductor based on MOS transistors operating in saturation is proposed. Linearisation is achieved in a common-source pair by driving the devices in a purely anti-phase mode. Simulation results show that the proposed transconductor would typically exhibit less than 1% THD for inout signals up to 5.7 V.< |
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