|
|||||
|
|
Effect of PECVD of SiO2 passivation layers on GaN and InGaP |
|
| Authors: | K. H. Baik P. Y. Park B. Luo K. P. Lee J. H. Shin C. R. Abernathy W. S. Hobson S. J. Pearton F. Ren |
| Affiliation: | a Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA b Department of Chemical Engineering, University of Florida, P.O. Box 116005, Gainesville, FL 32611, USA c Agere Systems, Murray Hill, NJ 07974, USA |
| Abstract: | Thin (200 ) layers of SiO2 were deposited by plasma enhanced chemical vapor deposition onto GaN and InGaP patterned with transmission line measurement contact pads. The sheet resistance of n-GaN and n- and p-InGaP was measured as a function of N2O/SiH4 ratio, rf chuck power, pressure and substrate temperature during the SiO2 deposition. The sheet resistance ratio before and after the deposition varied from 0.7 to 1.2, reflecting a competition between mechanisms that decrease doping (hydrogen passivation, ion-induced deep traps) and those that increase it (creation of shallow donor states in n-type material through preferential ion of the group V elements, gettering of hydrogen in p-type material). Under most conditions, SiO2 deposition creates minimal changes to the electrical properties of GaN and InGaP. |
| Keywords: | PECVD Hydrogen passivation n-sp-InGaP TLM n-GaN |
| 本文献已被 ScienceDirect 等数据库收录！ | |