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Low-noise gaas MESFET optimization using an orthogonal array approach
Authors:Dain C Miller  Robert A Sadler  Inder J Bahl
Abstract:This article presents an experimental optimization of the noise figure of small-signal self-aligned FETs. An L18 orthogonal array has been used to find the main effects of specific device parameters on noise performance at 18 GHz. This knowledge has been used to find an alternative device which shows a ~0.7-dB improvement in noise measure without requiring major process changes. Hybrid low-noise amplifiers built with the improved FETs confirm the noise performance and show record power performance for high dynamic range applications. © 1994 John Wiley & Sons, Inc.
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