Wafer scale interdigitated nanoelectrode devices functionalized using a MEMS-based deposition system

This paper reports on a methodology to elaborate interdigitated nanoelectrode devices (INDs) at the wafer scale, relying on a mix-and-match process which combines proximity optical lithography and electron beam lithography. An optimum exposure dose allowed fabricating nanodevices, at the wafer level, with a successful yield of 97%. The final devices are bonded onto conventional TO-8 packages. Electrical characterization in a short-circuited nanoelectrode is performed, revealing a 230?μΩ?cm resistivity value at 23?°C. A MEMS-based spotter made of cantilevers (called Bioplume) has been used to obtain precise functionalization of the INDs with sub-picoliter volume solutions. These INDs are the basis of multiple tunnel junction nanodevices, intended to serve as novel highly sensitive nanobiosensors.