Structure of DX-like centers in narrow-band IV–VI semiconductors doped with group-III elements |
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Authors: | I I Ivanchik D R Khokhlov A I Belogorokhov Z Popovi? N Rom?evi? |
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Affiliation: | (1) Physics Dependent, M. V. Lomonosov Moscow State University, 119899 Moscow, Russia;(2) State Institute of Rare Metals, Moscow, Russia;(3) Physics Institute, Belgrade University, Belgrade, Yugoslavia |
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Abstract: | This paper presents a study of the structure of the IR reflectance spectra in the sub-gap region of lead telluride doped with
indium and gallium and the Raman spectra in PbTe(In). In the Raman and reflectance spectra of PbTe(In), features are observed
at a frequency of ω
0⋍120 cm−1, whose amplitude sharply increases at temperatures T below the temperature where delayed photoconductivity appears, T
c⋍25 K. A similar feature at a frequency of ω
0⋍155 cm−1 is also observed in PbTe(Ga), with the amplitude of the feature sharply increasing for T>T
c⋍80 K. An analysis of the resulting data makes it possible to conclude that, in contrast with classical DX centers in III–V semiconductors, the microscopic structure of the impurity centers in the two-electron (DX-like) ground state does not correspond to an impurity atom shifted from a lattice site, whereas the impurity atom is shifted
from a lattice site for the metastable one-electron impurity state.
Fiz. Tekh. Poluprovodn. 32, 679–683 (June 1998) |
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