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| 非掺杂半绝缘LECGaAs中深施主缺陷对注入硅激活率的影响 | |
| 引用本文： | 杨瑞霞,贾晓华,付浚,李光平.非掺杂半绝缘LECGaAs中深施主缺陷对注入硅激活率的影响[J].河北工业大学学报,1999,28(1):12. |
| 作者姓名： | 杨瑞霞 贾晓华 付浚 李光平 |
| 作者单位： | 1. 河北工业大学,电气信息学院,天津,300130 2. 天津市红桥区职工大学,天津,300131 3. 天津电子材料研究所,天津,300192 |
| 摘 要： | 通过测量GaAs金属半导体场效应晶体管(MESFET)的饱和漏-源电流分布研究了深施主缺陷EL |
| 关 键 词： | 激活率 场效应晶体管 |
| 修稿时间： | 1998-09-23 |
Effect of the Deep Donor Defect on the Activation Coefficient of Implanted Silicon in Semiinsulating LECGaAs |
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| Yang Ruixia,Jia Xiaohua,Fu Jun,Li Guangping.Effect of the Deep Donor Defect on the Activation Coefficient of Implanted Silicon in Semiinsulating LECGaAs[J].Journal of Hebei University of Technology,1999,28(1):12. | |
| Authors: | Yang Ruixia Jia Xiaohua Fu Jun Li Guangping |
| Affiliation: | Yang Ruixia Jia Xiaohua Fu Jun Li Guangping |
| Abstract: | The effect of the deep donor defect EL2 on the activation coefficient of implanted silicon in semiinsulating LECGaAs has been studied by examining the uniformity of the saturation drain current of the GaAs metalsemiconductor fieldeffect transistors fabricated on the semiinsulating GaAs substrate.It is found that the activation coefficient of the implanted silicon increases with increasing the EL2 concentration.The mechanism for EL2to influence the activation coefficient is discussed. |
| Keywords: | GaAs |
| 本文献已被 CNKI 万方数据 等数据库收录！ | |