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The effect of DC in plane field on the operation of field access bubble memory devices
Authors:Gergis   I. Chen   T. Tocci   L.
Affiliation:Rockwell International, Anaheim, CA;
Abstract:The effect of a small dc in-plane field on the start-stop operation of field access bubble devices has been studied. Experimental results show that the bias margin in this mode is very sensitive to the magnitude of the field and its orientation relative to the start-stop direction of the drive field. In a T-I circuit a complete margin loss was observed for an in-plane field of 3 Oe oriented antiparallel to the start-stop direction. For parallel orientations of the in-plane field the start-stop margin improved and approached that of the continuous propagation margin at an in-plane field of approximately 6 Oe. Dependence of the start-stop margin on the orientation of the start-stop direction relative to the pattern was also observed. Measurements of the bubble collapse field at various points in the pattern show a very strong dependence on the in-plane field and the permalloy geometry. The collapse-field results and magnetostatic energy considerations which take into account local field variations and bubble-bubble interactions provide a basis for understanding the experimentally observed start-stop margins. These results show that a small tilt (2 to 3°) should be introduced in the bias field to overcome normal alignment tolerances and ensure that a favorable in-plane field is always present. This assures reliable start-stop operation.
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