0.5 mu m gate length InP/In/sub 0.75/Ga/sub 0.25/As/InP pseudomorphic HEMT with high DC and RF performance |
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| Authors: | Mesquida Kusters A Funke T Sommer V Wuller R Brittner S Kohl A Heime K |
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| Affiliation: | RWTH Aachen, Germany; |
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| Abstract: | High performance InP/In/sub 0.75/Ga/sub 0.25/As/InP pseudomorphic double heterojunction (DH) HEMTs with a gate length of 0.5 mu m are reported. Both DC and RF characteristics of this new type of Al-free HEMT demonstrate its suitability for microwave applications.<> |
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