Influence of temperature and layers on the characterization of ITO films |
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| Authors: | Jiaxiang Liu Da Wu Shengnan Zeng |
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| Affiliation: | 1. Hawaii Natural Energy Institute, University of Hawaii, Honolulu, HI 96822, USA;2. CNRS, Univ. Bordeaux, ICMCB, UPR 9048, F-33600 Pessac, France;3. CeCaMA, Univ. Bordeaux, ICMCB, UPR 9048, F-33600 Pessac, France;4. U.S Department of Energy, Washington, DC 20585, USA;1. School of Metallurgy and Materials Engineering, College of Engineering, University of Tehran, Tehran, Iran;2. Center of Excellence for High Performance Materials, University of Tehran, Tehran, Iran;3. Department of Metallurgy and Materials Engineering, Masjed Soleyman Branch, Islamic Azad University, Masjed Soleyman, Iran;1. Semiconductor Optoelectronics Research Group, Department of Physics and Chemistry, Faculty of Applied Sciences and Technology, Universiti Tun Hussein Onn Malaysia, Pagoh Educational Hub, Johor, Malaysia;2. Institute of Nano-Optoelectronics Research and Technology, Universiti Sains Malaysia, Penang, Malaysia;3. Low Dimensional Materials Research Centre, Department of Physics, Faculty of Science, Universiti Malaya, Kuala Lumpur, Malaysia;1. Department of Physics, Beihang University, Beijing 100191, China;2. School of New Energy Engineering, Leshan Vocational and Technical College, Leshan 614000, China;3. Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;4. Laboratory of Quantum Information Technology, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510006, China;5. Laboratory of Nanostanderization, National Center for Nanoscience and Technology, Beijing 100190, China;1. Department of Materials Science and Engineering, Korea University, Seoul 02841, Republic of Korea;2. SNTEK, 906 Hakun-li, Yangchon-myeon, Kimpo-si, Gyeonggi-do 415-843, Republic of Korea;3. Division of Physics and Semiconductor Science, Dongguk University, Seoul 100-715, Republic of Korea;4. School of Advanced Materials Science & Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do, 440-746, Republic of Korea |
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| Abstract: | In this paper, the effects of high heating temperature on electrical and optical properties of transparent indium tin oxide (ITO) films were investigated, which is a topic that has received little attention from previous studies. Uniform and transparent indium tin oxide (ITO) films were deposited onto quartz glass substrates through a sol–gel process. Specifically, the microstructure and phase of the films were analyzed by AFM, AES, and XRD. The sheet resistance and optical transmittance of the films were measured using the four-point probe method and spectrophotometer, respectively. The grain size of the ITO film was refined when it heated at 800 °C. The influence of coating layers on electrical and optical properties was also discussed. With the rise of heating temperature from 400 to 800 °C, the optical transmittance of the films climbed from 76 to 93% (750 °C). With the increase of dip-coating layers from 3 to 7, their sheet resistance varied from 642.1 to 241.0 Ω/□. |
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