Effects of ablation at different regions in three-dimensional orthogonal C/SiC composites ablated by oxyacetylene torch at 1800 °C |
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| Authors: | Bo Yan Zhaofeng Chen Jianxun Zhu Jianzhong Zhang Yun Jiang |
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| Affiliation: | 1. College of Material Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, PR China;2. Sinoma Science & Technology Co., Ltd., Nanjing 210012, PR China;1. Rocket Force University of Engineering, Xi’an, 710025, China;2. Project Management Center, Beijing, 100085, China;1. College of Materials Science and Engineering, Hunan Province Key Laboratory for Advanced Carbon Materials and Applied Technology, Hunan University, Changsha, 410082, PR China;2. Hunan Province Engineering Research Center for High Performance Pitch-based Carbon Materials, Hunan Toyi Carbon Material Technology Co., Ltd., Changsha, 410000, PR China;3. Key Laboratory of Advanced Functional Composite Materials, Aerospace Research Institute of Materials and Processing Technology, Beijing, 100076, PR China;4. Shanghai Composites Science & Technology Co., Ltd., NO. 3636, Zhaolou Road, Minhang District, Shanghai, 201112, PR China;5. State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body, Hunan University, Changsha, 410082, PR China |
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| Abstract: | C/SiC composites were prepared by polycarbosilane infiltration pyrolysis and ablated by oxyacetylene flame at 1800 °C for 180 s. Morphology and microstructure of C/SiC have been studied by scanning electron microscopy/energy dispersive spectroscopy, and X-ray diffraction analysis. Two concentric ring regions appeared on the surface of the ablated C/SiC. In the centre region of the ablated C/SiC was composed of irregular SiC particles with a lot of pores. The pores were resulted from (i) gas expansion in closed pores during ablation, and (ii) from the release of SiO gas produced by the oxidation of SiC with sufficiently low oxygen partial pressure. The results indicated the ablation was due to a combination of oxidation, mechanical erosion and recrystallization of the surface SiC. |
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