Diffusion bonding of SU 263 |
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| Authors: | B. Ravisankar J. Krishnamoorthi S.S. Ramakrishnan P.C. Angelo |
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| Affiliation: | 1. Department of Metallurgical and Materials Engineering, National Institute of Technology, Tiruchirappalli 620015, India;2. Department of Metallurgical Engineering, PSG College of Technology, Coimbatore 641004, India;3. Department of Mechanical Engineering, Tamil Nadu College of Engineering, Coimbatore 641004, India;1. Engineering Research Center of Transportation Materials of Ministry of Education, School of Materials Science and Engineering, Chang’an University, Xi’an 710064, China;2. State Key laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China;1. School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009, China;2. Beijing Institute of Control Engineering, Beijing 100190, China;3. National Engineering Research Center of Powder Metallurgy of Titanium & Rare Metals, Guangdong Institute of Materials and Processing, Guangzhou 510650, China;4. Beijing Engineering Research Center of Propulsion Technology, Beijing 100190, China |
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| Abstract: | Using a specially constructed apparatus, diffusion bonding of SU 263 alloy was studied in the temperature range of 1123–1323 K and compressive stress of 90% of its yield strength at the corresponding temperatures to determine the relative importance of the process parameters, the mechanism(s) responsible for bonding and the joint characteristics. Bond quality was assessed by optical metallography and lap shear testing. The mechanism of bonding was evaluated by grain growth equation. The experimental results were compared with a model developed by Pilling [Pilling, J., 1988. The kinetics of isostatic diffusion bonding in superplastic materials. Mater. Sci. Eng. 100, 137–144] in which the void closure by creep flow and diffusion are considered. Quantified EPMA line scan analysis was carried out to confirm the bonding mechanism and to determine the composition at the interface. |
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