Transport in semiconductors with low scattering rate and at high frequencies

A rigorous derivation of the hydrodynamic carrier transport equations is obtained by extending the moment method to include the moment equation of the collision free path which contains both the scattering and the generation-recombination-trapping-tunneling events. This leads to an electron (or hole) current equation with a new inductive term $\text{τ}\text{j}{}_{\mathrm{<mtext>N</mtext>}}\text{/?t}$ which becomes important when the signal frequency becomes comparable with the reciprocal average collision relaxation time, $\text{τ}$^?1, and which adds a collision delay inductance to the conduction current lines of the circuit model.