| 旁栅电压下MESFET沟道电流的低频振荡 |
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| 引用本文： | 丁勇,赵福川,毛友德,夏冠群,赵建龙.旁栅电压下MESFET沟道电流的低频振荡[J].半导体学报,2000,21(12):1228-1230. |
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| 作者姓名： | 丁勇 赵福川 毛友德 夏冠群 赵建龙 |
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| 作者单位： | 合肥工业大学应用物理系,合肥 |
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| 基金项目： | 国家自然科学基金;69676003; |
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| 摘 要： | 通过测试不同旁栅电压条件下的 MESFET沟道电流的低频振荡现象,发现旁栅偏压无论朝正向还是负向变化都存在一个阈值可消除此低频振荡.并从理论上探讨了出现这种现象的原因 ,初步认为这与沟道-衬底(C-S)结的特性和高场下衬底深能级EL2的碰撞电离有关
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| 关 键 词： | 低频振荡 沟道-衬底结 EL_2碰撞电离 |
| 文章编号： | 0253-4177(2000)12-1228-03 |
| 修稿时间： | 1999年6月25日 |
Low-Frequency Oscillation of MESFET Channel Current Under Sidegating Bias |
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| DING Yong\,ZHAO Fu-chuan\,MAO You-de\,XIA Guan-qun\ and ZHAO Jian-long\.Low-Frequency Oscillation of MESFET Channel Current Under Sidegating Bias[J].Chinese Journal of Semiconductors,2000,21(12):1228-1230. |
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| Authors: | DING Yong\ ZHAO Fu-chuan\ MAO You-de\ XIA Guan-qun\ and ZHAO Jian-long\ |
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| Affiliation: | DING Yong\+1,ZHAO Fu-chuan\+2,MAO You-de\+1,XIA Guan-qun\+2 and ZHAO Jian-long\+2 |
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| Abstract: | The low-frequency oscillation of channel current by test ing the MESFET output characteristic in different sidegating bias conditions is presented.It is found that whether the sidegating bias changes positively or negatively,there is always a threshold voltage to eliminate the oscillation.The pheno menon is related to the Channel-Substrate (C-S) junction properties and the impact ionization of traps-EL2 in high fields. |
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| Keywords: | low-freqneucy osillation channel-substrate (C-S) junction ionization of traps-EL_2 |
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