| 非制冷红外探测器用VO_x薄膜的制备 |
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| 引用本文： | 李华高,杨子文,刘爽.非制冷红外探测器用VO_x薄膜的制备[J].半导体光电,2001(1). |
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| 作者姓名： | 李华高 杨子文 刘爽 |
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| 作者单位： | 重庆光电技术研究所!重庆400060(李华高，杨子文)，重庆光电技术研究所!重庆400060电子科技大学四川成都610054(刘爽) |
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| 摘 要： | 介绍了一种采用反应溅射工艺 ,通过控制不同气氛的分布制备VOx 薄膜的方法 ,并制备出电阻温度系数 (TCR)优于 - 2 %的非制冷红外探测器用VOx 薄膜。其XPS、XRD分析结果表明 ,薄膜的生长情况与制备工艺条件有密切关系。
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| 关 键 词： | 非制冷红外探测器 VO_x薄膜 反应溅射 电阻温度系数 |
Preparation of VO_x Films for Uncooled Infrared Detectors |
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| LI Hua gao ,YANG Zi wen ,LIU Suang.Preparation of VO_x Films for Uncooled Infrared Detectors[J].Semiconductor Optoelectronics,2001(1). |
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| Authors: | LI Hua gao YANG Zi wen LIU Suang |
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| Affiliation: | LI Hua gao 1,YANG Zi wen 1,LIU Suang 1,2 |
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| Abstract: | Preparation of VO x films by reactive sputtering and controlling the distribution of gases is introduced. VO x films for uncooled infrared detectors with the TCR overmatch of -2% are successfully prepared. Study results of XPS and XRD are given, which show that the formation of VO x films is greatly dependent on the condition of preparation technology. |
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| Keywords: | uncooled infrared detector VO x films reactive sputtering TCR |
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