PECVD法制备硅化钛膜的工艺研究

硅化钛薄膜由于电阻率低和其它一些良好特性,在VLSI的栅电极和互连线中显示出它潜在的优势。本文研究了用PECVD法制备硅化钛膜的卫艺。结果表明:所形成硅化钛膜的性质强烈地依赖于淀积工艺条件。还确定了典型工艺条件,并用俄歇电子能谱分析了硅化钛膜的组分。

Study of Titanium Silicide Films Processed by PECVD Method

The Titanium silicide film has its potential advantage in forming a gate electrode and interconnection for VLSI because of its low resistivity and some other good characteristics. In this paper, the titanium silicide films processed by PECVD method have been studied. The results show that the properties of the titanium silicide films formed in our work stronly rely on the deposition condition. The typical growth condition is also determined. The composition of titanium silicide films is analysed by AES method.