A new on-chip ESD protection circuit with dual parasitic SCRstructures for CMOS VLSI

A new CMOS on-chip electrostatic discharge (ESD) protection circuit which consists of dual parasitic SCR structures is proposed and investigated. Experimental results show that with a small layout area of 8800 μ², the protection circuit can successfully perform negative and positive ESD protection with failure thresholds greater than ±1 and ±10 kV in machine-mode (MM) and human-body-mode (HBM) testing, respectively. The low ESD trigger voltages in both SCRs can be readily achieved through proper circuit design and without involving device or junction breakdown. The input capacitance of the proposed protection circuit is very low and no diffusion resistor between I/O pad and internal circuits is required, so it is suitable for high-speed applications. Moreover, this ESD protection circuit is fully process compatible with CMOS technologies