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涂敷法制备的碳纳米管阴极的场发射研究
引用本文:王琪琨, 朱钧, 朱长纯,. 涂敷法制备的碳纳米管阴极的场发射研究[J]. 电子器件, 2005, 28(2): 239-241,244
作者姓名:王琪琨   朱钧   朱长纯  
作者单位:西安交通大学理学院,710049,西安;西安交通大学电子与信息工程学院,710049,西安
基金项目:国家自然科学基金;西安交通大学校科研和教改项目
摘    要:研究了用涂敷法制备碳纳米管阴极的新工艺和改善其场发射特性的新方法,裂解法获得的碳纳米管与有机粘合剂等混合、研磨,直接涂敷在Si基底上,二极管结构测量的结果表明,碳纳米管阴极有较低的开启电场(1.25~1.5V/μm),场强为5V/μm时,电流密度达到了42μA/cm^2,F—N曲线也非常符合场发射规律。浆料中粘合剂的比例增大时,碳纳米管阴极的场发射性能会有所降低,施加外电场会改善其场发射特性。

关 键 词:碳纳米管阴极  涂敷  粘结剂  场发射
文章编号:1005-9490(2005)02-0239-03

Field Emission from a Cathode Coated with Carbon Nanotubes
WANG Qi-kun,ZHU Jun,ZHU Chang-chun. Field Emission from a Cathode Coated with Carbon Nanotubes[J]. Journal of Electron Devices, 2005, 28(2): 239-241,244
Authors:WANG Qi-kun  ZHU Jun  ZHU Chang-chun
Abstract:A new process for carbon nanotubes ( CN T) coat ing and a method to enhance it s field emissionef fect w er e studied . A mix ture paste for coat ing w as prepared by mixing or ganic binder and CNT s , obtainedf rom decompositio n o f hydrocar bon . T he paste of CN Ts w as co ated o n Si subst rate . The measurements carried out using a diode st ructure reveal that the f ield emission of the CN Ts cathode can be turnedon w ith a f ield as low as 1. 25 ~ 1. 5 V/ Lm and can at tain a emission current density of 42LA / cm2 at 5 V/Lm . CNT coating ex hibit s in accord w ith rules of field emission . With the proport ion of the binder increasing, a g radual emission current decrease is o bser ved . Coat ing in an elect ric f ield can modify the I-Vcharacter ist ics of the CNT cathode .
Keywords:CNT cathode  coating  binder  field emission
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