High-speed signal switching with a monolithic integrated p-i-n/amp/switch on indium phosphide |
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| Authors: | CW Seabury RB Bylsma GP Vella-Coleiro SJ Kim PS Davisson CML Yee J Eng D Deblis J Jeong YK Jhee |
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| Affiliation: | AT&T Bell Labs., Murray Hill, NJ, USA; |
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| Abstract: | Operation of an optoelectronic integrated circuit which includes two p-i-n photodetectors, preamplifiers, a 2*2 crosspoint switch, and output buffers has been demonstrated. These circuits are fabricated in semi-insulating InP:Fe substrates by vapor-phase epitaxy and ion implantation using a planar horizontally integrated technology. Signals modulated at 150 MHz are shown to be switched at 15 MHz, with the circuits capable of detecting and passing data modulated at approximately 1 GHz.<> |
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