Dielectric relaxator behaviour of the system Sr1−xLaxTi1−xCoxO3 (x ⩽ 0.40) |
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Authors: | Om Parkash Ch. Durga Prasad Devendra Kumar |
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Affiliation: | (1) School of Materials Science and Technology, Institute of Technology, Banaras Hindu University, 221 005 Varanasi, India;(2) Department of Ceramic Engineering, Institute of Technology, Banaras Hindu University, 221 005 Varanasi, India |
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Abstract: | The dielectric behaviour of the valence-compensated solid solution Sr1–xLaxTi1–xCoxO3 (x=0.05, 0.10, 0.20, 0.30 and 0.40) has been studied as a function of temperature and frequency. Compositions withx=0.20, 0.30 and 0.40 exhibit high values of dielectric constant. This high dielectric constant is due partly to the presence of interfacial polarization, and partly to the formation of grain-boundary barrier layers in these materials. The presence of barrier layers is shown by complex plane impedance analysis. |
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