Co掺杂SiC薄膜的紫外光敏特性

采用射频磁控溅射技术和复合靶材的方法,在p型单晶Si衬底上制备SiC薄膜及Co掺杂SiC薄膜。在真空度为1.0×10-4Pa、温度为1 200℃条件下,保温1 h进行晶化处理。通过X射线衍射(XRD)、X射线能量色散谱(EDX)、霍尔测量和紫外激光器等对薄膜的晶体结构、Co掺杂浓度、载流子浓度、导电类型及光敏特性等进行测试。结果表明,SiC薄膜为6H型晶体结构,Co掺杂后SiC薄膜的导电类型由n型转变为p型,载流子浓度比未掺杂的高2个数量级,对紫外光灵敏度是未掺杂的2倍,光照响应时间比未掺杂的缩短1/3。

UV-photosensitive characteristics of SiC thin film doped with Co

The un-doped and Co-doped SiC films were deposited on p-type Si substrates by the rf-magnetron sputtering technique and the method of composite target,and then they were annealed at 1 200 ℃ for 1 h in a vacuum furnace with a pressure better than 1.0×10-4 Pa.The crystal structure,concentration of Co doping,carrier concentration and conductivity type as well as photosensitivity properties of these films were characterized by X-ray diffraction(XRD),energy dispersive X-ray spectroscopy(EDX),Hall effect measurements and ultraviolet laser.The results show that the crystal structure of SiC films is 6H-type,the conductivity type of SiC films after Co doping is changed from n type to p type,the carrier concentration also increases two orders than undoped-SiC films,and the UV-photosensitivity of Co-doped SiC films increases 1 times than that of undoped-SiC films,its response time also decreases 1/3 than that of undoped-SiC films.