| Optimal Control of Oxygen Concentration in a Magnetic Czochralski Crystal Growth by Response Surface Methodology |
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| 作者姓名： | Huiping YU Yunkan SUI Jing WANG Fengyi ZHANG Xiaolin DAI |
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| 作者单位： | [1]Numerical Simulation Center of Engineering, Beijing University of Technology, Beijing 100022, China [2]General Research Institute for Nonferrous Metals, Beijing 100088, China |
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| 基金项目： | 北京工业大学校科研和教改项目 |
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| 摘 要： | Concepts and techniques of response surface methodology have been widely applied in many branches of engineering, especially in the chemical and manufacturing areas. This paper presents an application of the methodology in a magnetic crystal Czochralski growth system for single crystal silicon to optimize the oxygen concentration at the crystal growth interface in a cusp magnetic field. The simulation demonstrates that the response surface methodology is a feasible algorithm for the optimization of the Czochralski crystal growth process.
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| 关 键 词： | 最优控制 氧浓度 磁场 CzochralsRi晶体生长 表面响应方法 |
| 收稿时间： | 2004-11-23 |
| 修稿时间： | 2005-04-27 |
Optimal Control of Oxygen Concentration in a Magnetic Czochralski Crystal Growth by Response Surface Methodology |
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| Huiping YU Yunkan SUI Jing WANG Fengyi ZHANG Xiaolin DAI.Optimal Control of Oxygen Concentration in a Magnetic Czochralski Crystal Growth by Response Surface Methodology[J].Journal of Materials Science & Technology,2006,22(2):173-178. |
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| Authors: | Huiping YU Yunkan SUI Jing WANG Fengyi ZHANG Xiaolin DAI |
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| Affiliation: | Numerical Simulation Center of Engineering, Beijing University of Technology, Beijing 100022, China; General Research Institute for Nonferrous Metals, Beijing 100088, China |
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| Abstract: | Concepts and techniques of response surface methodology have been widely applied in many branches of engineering, especially in the chemical and manufacturing areas. This paper presents an application of the methodology in a magnetic crystal Czochralski growth system for single crystal silicon to optimize the oxygen concentration at the crystal growth interface in a cusp magnetic field. The simulation demonstrates that the response surface methodology is a feasible algorithm for the optimization of the Czochralski crystal growth process. |
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| Keywords: | Czochralski Magnetic field Optimization Response surface methodology |
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