| 3″硅片CVD外延电阻丝辐射加热物理基础及升温瞬态过程分析 |
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| 引用本文： | 曹青,叶志镇,陈伟华,张侃,赵炳辉,李剑光. 3″硅片CVD外延电阻丝辐射加热物理基础及升温瞬态过程分析[J]. 浙江大学学报(工学版), 1996, 0(4) |
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| 作者姓名： | 曹青 叶志镇 陈伟华 张侃 赵炳辉 李剑光 |
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| 作者单位： | 浙大硅材料国家重点实验室 |
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| 基金项目： | 国家教委优秀青年教师基金,博士点基金,浙江省自然科学基金 |
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| 摘 要： | 本文论述了关于ＵＨＶＣＶＤ系统电阻丝辐射加热装置传热规律的物理基础；并利用它们对硅片升温的瞬态过程进行了研究，取得了与实验相近的结果．这为ＵＨＶＣＶＤ硅低温外延时控制硅片温度提供了理论根据．
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| 关 键 词： | 辐射传热；瞬态；超高真空化学气相沉积；硅 |
Study on a transient state of temperature rising of a 3" silicon wafer and heat transfer of a radiating resistance in a UHVCVD system |
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| Cao Qing, Ye Zhizhen, Chen Weihua, Zhang Kan,Zhao Binghui, Li Jianguang. Study on a transient state of temperature rising of a 3" silicon wafer and heat transfer of a radiating resistance in a UHVCVD system[J]. Journal of Zhejiang University(Engineering Science), 1996, 0(4) |
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| Authors: | Cao Qing Ye Zhizhen Chen Weihua Zhang Kan Zhao Binghui Li Jianguang |
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| Abstract: | n this paper, some heat-transfering rules of a radiating resistance in a UHVCVD systemwere discribed on principles of heat transfer. A transient state of temperature rising of a 3" Siwafer was analysed and modeled. The result showed that the theoretic analysis appromatesto experimental data. |
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| Keywords: | radiant heat transfer transient state UHVCVD silicon |
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