| Ti/Ti_3SiC_2复合材料的界面结构 |
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| 引用本文： | 谷万里.Ti/Ti_3SiC_2复合材料的界面结构[J].热加工工艺,2006(9). |
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| 作者姓名： | 谷万里 |
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| 作者单位： | 山东理工大学机械工程学院 山东淄博 |
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| 摘 要： | 研究了Ti_3SiC_2和Ti在1573K、20MPa压力下的相互联接及界面结构。结果表明在该温度下二者之间可以相互联接并形成反应层,反应层的主要成分是Ti_5Si_3和TiC_x,各层之间有明显的界面存在,在界面两端硅含量的变化十分明显。
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| 关 键 词： | Ti_3SiC_2 高温连接 反应层 |
Interface Structure of Ti/Ti_3SiC_2 composite |
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| GU Wan-li.Interface Structure of Ti/Ti_3SiC_2 composite[J].Hot Working Technology,2006(9). |
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| Authors: | GU Wan-li |
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| Abstract: | The conjunction and interface structure of Ti/Ti_3SiC_2 composite at 1573 K and 20 MPa is studied.The results show that the chemical reaction layer between Ti and Ti_3SiC_2 will be formed under above condition and the main phases of the reaction layer consist of Ti_5Si_3 and TiC_x.The content of silicon has an obvious change near the reaction layer. |
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| Keywords: | Ti_3SiC_2 high temperature conjunction reaction layer |
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