Anisotropic interface induced formation of Sb nanowires on GaSb(111)A substrates |
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Authors: | Proessdorf A Grosse F Perumal K Braun W Riechert H |
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Affiliation: | Paul-Drude-Institut für Festk?rperelektronik, Hausvogteiplatz 5-7, Berlin, Germany. proessdorf@pdi-berlin.de |
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Abstract: | The growth of Sb nanowires on GaSb(111)A substrates is studied by in?situ azimuthal scan reflection high-energy electron diffraction (ARHEED). Bulk and layer contributions can be distinguished in the ARHEED transmission pattern through the Sb nanowires. The three-dimensional structure of the growing Sb nanowires is identified by post-growth atomic force microscopy (AFM) and x-ray diffraction (XRD). The lattice match of the Sb crystal along the [Formula: see text] and the GaSb crystal along [Formula: see text] directions lead to a preferential orientation of the Sb nanowires. The Sb adsorption and desorption kinetics is studied by thermal desorption spectroscopy. |
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