| TiO_2和Ag修饰硅基电极的光电性能研究 |
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| 引用本文： | 于磊,张建华,李怀祥.TiO_2和Ag修饰硅基电极的光电性能研究[J].广州化工,2014(3):44-45,49. |
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| 作者姓名： | 于磊 张建华 李怀祥 |
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| 作者单位： | [1]潍坊科技学院山东半岛蓝色经济工程研究院,山东寿光262700 [2]山东师范大学化学化工与材料科学学院,山东济南250014 |
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| 摘 要： | 采用n型单晶硅经光电化学阳极刻蚀成多孔硅,然后用TiO2和硝酸银溶液修饰多孔硅表面,通过电流-电压关系,时间-电流密度关系等方法研究几种复合多孔硅电极的光电性能,发现用TiO2和金属膜修饰的多孔硅电极光电流敏感,启动电压低,亮暗电流比明显,表现了更好的电极稳定性。
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| 关 键 词： | 硅电极 电流-电压关系 光电性能 |
Photoelectrochemical Properties of Ag ^＋ and TiO2 Modified Silicon Electrode |
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| Affiliation: | YU Lei1 , ZHANG Jian - hua1 , LI Huai - xiang2 ( 1 Shandong Peninsula Blue Economic Engineering Academy, Weifang University of Science and Technology, Shandong Shouguang 262700; 2 College of Chemistry, Chemical Engineering ＆ Material Science, Shandong Normal University, Shandong Jinan 250014, China) |
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| Abstract: | Porous silicon （PS） was formed by etching n type silicon photo -electrochemically, and the surface of porous silicon was modified by TiO2 and silver nitrate solution. Photoelectrochemical effects of the several fabricated PS electrodes were measured by photocurrent - potential relationship, and time - current density relationship. As a result, the porous silicon modified by TiO2 and metal membrane showed good photoelectrochemical stability. |
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| Keywords: | silicon electrode photocurrent -potential relationship photoelectrochemical effects |
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